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CG2H40025 - RF Power GaN HEMT

General Description

The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 6 GHz Operation.
  • 17 dB Small Signal Gain at 2.0 GHz.
  • 15 dB Small Signal Gain at 4.0 GHz.
  • 30 W typical PSAT.
  • 70% Efficiency at PSAT.
  • 28 V Operation.

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CG2H40025 25 W, 28 V RF Power GaN HEMT Description The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solderdown, pill package. PNs: CG2H40025P and CG2H40025F Package Types: 440196 and 440166 Features • Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.0 GHz • 15 dB Small Signal Gain at 4.