CG2H40025 - 28V RF Power GaN HEMT

Datasheet Summary

Description

Wolfspeed’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

Up to 6 GHz Operation.
17 dB Small Signal Gain at 2.0 GHz.
15 dB Small Signal Gain at 4.0 GHz.
30 W typical PSAT.
70% Efficiency at PSAT.
28 V Operation.

Wolfspeed

📥 Download Datasheet

Datasheet Details

Part number	CG2H40025
Manufacturer	Wolfspeed
File Size	3.20 MB
Description	28V RF Power GaN HEMT
Datasheet	CG2H40025 Datasheet
Additional preview pages of the CG2H40025 datasheet.

📁 Similar Datasheet

CG2H40025 - RF Power GaN HEMT (CREE)
CG2H40025 - RF Power GaN HEMT (MACOM)
CG2H40010 - RF Power GaN HEMT (MACOM)
CG2H40010 - RF Power GaN HEMT (CREE)
CG2H40045 - RF Power GaN HEMT (MACOM)
CG2H40045 - RF Power GaN HEMT (CREE)
CG2H40120 - 28V RF Power GaN HEMT (MACOM)
CG2H30070F - RF Power GaN HEMT (MACOM)
CG2 - MINIATURE CLAMPER / DAMPER GLASS PASSIVATED RECTIFIER (General Semiconductor)
CG2 - Standard Sinterglass Diode (Vishay Siliconix)

Other Datasheets by Wolfspeed

CG2H40035 - RF Power GaN HEMT

Full PDF Text Transcription

Click to expand full text

CG2H40025 25 W, 28 V RF Power GaN HEMT Description Wolfspeed’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill package. PNs: CG2H40025P and CG2H40025F Package Types: 440196 and 440166 Features • Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.0 GHz • 15 dB Small Signal Gain at 4.

Published: Jun 25, 2023 |