CGH31240F
CGH31240F is GaN HEMT manufactured by MACOM Technology Solutions.
Description
The CGH31240F is a gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Package Types: 440201 PN: CGH31240F
Typical Performance Over 2.7-3.1 GHz (TC = 25ºC) of Demonstration Amplifier
Parameter Output Power Gain Power Added Efficiency
2.7 GHz 243 11.9 60
2.8 GHz 249 11.9 61
2.9 GHz 249 11.9 60
3.0 GHz 245 11.9 59
3.1 GHz 243 11.9 52
Note: Measured in the CGH31240F-AMP amplifier circuit, under 300μs pulse width, 20% duty cycle, PIN = 42 d Bm
Units W d B %
Features
- 2.7
- 3.1 GHz Operation
- 12 d B Power Gain
- 60% Power Added Efficiency
- < 0.2 d B Pulsed Amplitude Droop
Large Signal Models Available for ADS and MWO
1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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Rev. 2.2, 2022-11-11 https://.ma./support
Absolute Maximum Ratings (not simultaneous) at 25ºC Case Temperature
Parameter Pulse Width Duty Cycle Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature3
Symbol PW DC VDSS VGS PDISS TSTG TJ IGMAX IDMAX TS τ RθJC TC
Rating 1 50 120
-10, +2 345
-65, +150 225 60 24 245 40 0.5
-40, +150
Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering 3 Measured for the CGH31240F at PDISS = 280 W. Pulse Width = 300μs, Duty Cycle = 20%
Units ms %
ºC m A A ºC in-oz ºC/W ºC
Conditions 25ºC
25ºC 85ºC 30 seconds
Electrical...
