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CGH40006P - RF Power GaN HEMT

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MACOM

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CGH40006P RF Power GaN HEMT by MACOM - Datasheet Preview — Datasheet preview – CGH40006P

Datasheet Details

Part number	CGH40006P
Manufacturer	MACOM
File Size	1.53 MB
Description	RF Power GaN HEMT
Datasheet	CGH40006P Datasheet
Additional preview pages of the CGH40006P datasheet.

Product details

Description

The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 6 GHz Operation.
13 dB Small Signal Gain at 2.0 GHz.
11 dB Small Signal Gain at 6.0 GHz.
8 W typical at PIN = 32 dBm.
28 V Operation.

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Published: May 13, 2024 |