CGH40006P Datasheet | MACOM Technology Solutions

Description The CGH40006P is an unmatched, gallium nitride (Ga N) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. Ga N HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and pressed amplifier circuits. The transistor is available in a solder-down, pill package. Package Type: 440109 PN: CGH40006P Features - Up to 6 GHz Operation - 13 d B Small Signal Gain at 2.0 GHz - 11 d B Small Signal Gain at 6.0 GHz - 8 W typical at PIN = 32 d Bm - 28 V Operation Applications - 2-Way Private Radio - Broadband Amplifiers - Cellular Infrastructure - Test Instrumentation - Class A, AB, amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: Rev. 3.3, 2022-11-1 https://.ma./support Absolute Maximum Ratings (not simultaneous) at 25ºC Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Thermal Resistance, Junction to Case3 Case Operating Temperature3 Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering 3 Measured for the CGH40006P at PDISS = 8 W. Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS RθJC TC Rating 120 -10, +2 -65, +150 225 2.1 0.75 245 9.5 -40, +150 Units Conditions 25ºC ºC m A 25ºC A ºC ºC/W 85ºC ºC Electrical Characteristics (TC = 25ºC) Characteristics Symbol Min. Typ. Max. DC Characteristics1 Gate Threshold Voltage VGS(th) -3.8 -3.0...