CGHV35120F
Description
The CGHV35120F is a gallium nitride (Ga N) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9
- 3.8 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
PN: 440162 Package Type: CGHV35120F
Typical Performance 3.1
- 3.5 GHz (TC = 85ºC)
Parameter
3.1 GHz
3.2 GHz
Output Power
Gain
Drain Efficiency
3.3 GHz 132 12.8 63
3.4 GHz 136 12.9 62
3.5 GHz 134 12.8 62
Note: Measured in the CGHV35120F-AMP1 application circuit, under 100 μs pulse width, 10% duty cycle, PIN = 38.5 d Bm
Units W d Bc %
Features
- Rated Power = 120 W @ TCASE = 85°C
- Operating Frequency = 2.9
- 3.8 GHz
- Transient 100 μsec
- 300 μsec @ 20% Duty Cycle
- 13 d B Power Gain @ TCASE = 85°C
- 62% Typical Drain Efficiency @ TCASE = 85°C
- Input Matched
- <0.3 d B Pulsed Amplitude Droop
Large Signal Models Available...
