CGHV35120F hemt equivalent, gan hemt.
* Rated Power = 120 W @ TCASE = 85°C
* Operating Frequency = 2.9 - 3.8 GHz
* Transient 100 μsec - 300 μsec @ 20% Duty Cycle
* 13 dB Power Gain @ TCASE = 8.
The transistor is supplied in a ceramic/metal flange package.
PN: 440162 Package Type: CGHV35120F
Typical Performance.
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