| Title | GaN FETs Amplifier,GaN,120W,3.1-3.5GHz,G50V3,50V |
| Description | The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PN: 440162 Package Type: CGHV35120F Typical Performance 3.1 - 3.5 GHz (TC = 85º... |
| Features |
• Rated Power = 120 W @ TCASE = 85°C • Operating Frequency = 2.9 - 3.8 GHz • Transient 100 μsec - 300 μsec @ 20% Duty Cycle • 13 dB Power Gain @ TCASE = 85°C • 62% Typical Drain Efficiency @ TCASE = 85°C • Input Matched • <0.3 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and it... |
| Datasheet |
 CGHV35120F Datasheet - 532.15KB |
| Distributor |
Mouser Electronics |
| Stock | 0 In stock |
| Price |
50 units: 354.77 USD
|
| BuyNow |
 No Longer Stocked - Manufacturer a MACOM CGHV35120F
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
50 units: 354.77 USD |
||
 Richardson RFPD |
20 units: 429.98 USD |
BuyNow |
