CGHV40030 Datasheet | MACOM Technology Solutions

Description The CGHV40030 is an unmatched, gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S- and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Typical Performance 0.96 - 1.4 GHz (TC = 25ºC), 50 V Parameter Gain @ PSAT Saturated Output Power Drain Efficiency @ PSAT 0.96 GHz 15.6 29 62 Note: Measured CW in the CGHV40030-AMP application circuit. 1.1 GHz 15.8 30 74 1.25 GHz 16.6 36 64 Package Types: 440166 and 440196 PN: CGHV40030 1.4 GHz 15.8 31 67 Units d B W % Features - Up to 6 GHz Operation - 30 W Typical Output Power - 16 d B Gain - Application circuit for 0.96 - 1.4 GHz - 70% Efficiency at PSAT - 50 V Operation Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit CGHV40030F-AMP CGHV40030F-AMP2 Operating Frequency 0.96 - 1.4 GHz 0.5 - 2.7 GHz Operating Voltage 50 V 50 V Large Signal Models Available for ADS and MWO 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: Rev. 1.6, 2022-12-13 https://.ma./support Absolute Maximum Ratings (not simultaneous) at 25ºC Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque Case Operating Temperature3 Thermal Resistance, Junction to...