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CGHV40030 - GaN HEMT

General Description

Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.

The device can be deployed for L, S and C-Band amplifier applications.

The datasheet specifications are based on a 0.

Key Features

  • Up to 6 GHz Operation.
  • 30 W Typical Output Power.
  • 16 dB Gain.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Typical Performance 0.96 - 1.4 GHz (TC = 25˚C), 50 V Parameter 0.96 GHz 1.1 GHz 1.25 GHz Gain @ PSAT Saturated Output Power 15.6 29 15.8 30 Drain Efficiency @ PSAT 62 74 Note: Measured CW in the CGHV40030-AMP application circuit. 16.6 36 64 Package Types: 440166 and 440196 PN: CGHV40030 1.4 GHz 15.