CGHV40030
CGHV40030 is GaN HEMT manufactured by Cree.
30 W, DC
- 6 GHz, 50 V, GaN HEMT
Description
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96
- 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package.
Typical Performance 0.96
- 1.4 GHz (TC = 25˚C), 50 V
Parameter
0.96 GHz
1.1 GHz
1.25 GHz
Gain @ PSAT Saturated Output Power
15.6 29
15.8 30
Drain Efficiency @ PSAT
Note: Measured CW in the CGHV40030-AMP...
