CGHV40030 Overview
Key Specifications
Description
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications.
Key Features
- Up to 6 GHz Operation
- 30 W Typical Output Power
- 16 dB Gain Application circuit for 0.96 - 1.4 GHz
- 70% 50 V Efficiency Operation at PSAT Listing of Available Hardware Application Circuits / Demonstration Circuits
