CGHV40030
CGHV40030 is GaN HEMT manufactured by MACOM Technology Solutions.
30 W, DC
- 6 GHz, 50 V, GaN HEMT
Description
The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S- and C-Band amplifier applications. The datasheet specifications are based on a 0.96
- 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package.
Typical Performance 0.96
- 1.4 GHz (TC = 25ºC), 50 V
Parameter Gain @ PSAT Saturated Output Power Drain Efficiency @ PSAT
0.96 GHz 15.6 29 62
Note: Measured CW in the CGHV40030-AMP application circuit.
1.1 GHz 15.8 30...
