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CGHV40030 - GaN HEMT

General Description

The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.

The device can be deployed for L-, S- and C-Band amplifier applications.

Key Features

  • Up to 6 GHz Operation.
  • 30 W Typical Output Power.
  • 16 dB Gain.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S- and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Typical Performance 0.96 - 1.4 GHz (TC = 25ºC), 50 V Parameter Gain @ PSAT Saturated Output Power Drain Efficiency @ PSAT 0.96 GHz 15.6 29 62 Note: Measured CW in the CGHV40030-AMP application circuit. 1.1 GHz 15.8 30 74 1.25 GHz 16.6 36 64 Package Types: 440166 and 440196 PN: CGHV40030 1.4 GHz 15.