CGHV40030 Overview
The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S- and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier.
CGHV40030 Key Features
- Up to 6 GHz Operation
- 30 W Typical Output Power
- 16 dB Gain
- Application circuit for 0.96
- 1.4 GHz
- 70% Efficiency at PSAT
- 50 V Operation
- 1.4 GHz 0.5
- 2.7 GHz
