CGHV40030 Datasheet and Specifications PDF

The CGHV40030 is a GaN HEMT.

Key Specifications

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Part NumberCGHV40030 Datasheet
ManufacturerMACOM Technology Solutions
Overview The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be de.
* Up to 6 GHz Operation
* 30 W Typical Output Power
* 16 dB Gain
* Application circuit for 0.96 - 1.4 GHz
* 70% Efficiency at PSAT
* 50 V Operation Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit CGHV40030F-AMP CGHV40030F-AMP2 Operating Frequency 0..
Part NumberCGHV40030 Datasheet
DescriptionGaN HEMT
ManufacturerCree
Overview Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be.
* Up to 6 GHz Operation
* 30 W Typical Output Power
*
* 16 dB Gain Application circuit for 0.96 - 1.4 GHz
*
* 70% 50 V Efficiency Operation at PSAT Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit CGHV40030F-AMP CGHV40030F-AMP2 Operati.
Part NumberCGHV40030 Datasheet
DescriptionGaN HEMT
ManufacturerWolfspeed
Overview Wolfspeed’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device c.
* Up to 6 GHz Operation
* 30 W Typical Output Power
* 16 dB Gain
* Application circuit for 0.96 - 1.4 GHz
* 70% Efficiency at PSAT
* 50 V Operation Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit CGHV40030F-AMP CGHV40030F-AMP2 Operating Frequency 0..

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