| Title | RF Amplifier MMIC, DIE, GaN, 40W, 2.0 - 6.0GHz, 28V, |
| Description | The CMP2060035D is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and... |
| Features |
• 29 dB small signal gain • 35 W typical PSAT • Operation up to 28 V • High breakdown voltage • High temperature operation • Size 0.144 x 0.162 x 0.004 inches Applications • Ultra broadband drivers • Fiber drivers • Test instrumentation • EMC amplifier drivers Typical Performance Over 2.0 - 6.0 GHz (TC = 25 °C) Parameter 2.0 GHz 3.0 GHz 4.0 G... |
| Datasheet |
 CMPA2060035D Datasheet - 354.29KB |
| Distributor |
Mouser Electronics |
| Stock | 0 In stock |
| Price |
1 units: 1014.31 USD
|
| BuyNow |
 No Longer Stocked - Manufacturer a MACOM CMPA2060035D
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
1 units: 1014.31 USD |
