CMPA2060035D Datasheet | MACOM Technology Solutions

Description The CMP2060035D is a gallium nitride (Ga N) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). Ga N has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Ga N HEMTs also offer greater power density and wider bandwidths pared to Si and Ga As transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. PN's: CMPA2060035D Features - 29 d B small signal gain - 35 W typical PSAT - Operation up to 28 V - High breakdown voltage - High temperature operation - Size 0.144 x 0.162 x 0.004 inches Applications - Ultra broadband drivers - Fiber drivers - Test instrumentation - EMC amplifier drivers Typical Performance Over 2.0 - 6.0 GHz (TC = 25 °C) Parameter 2.0 GHz 3.0 GHz 4.0 GHz Small Signal Gain Output Power1 Power Added Efficiency 5.0 GHz 30 41 42 Note: 1 Typical data with 50 Ω output load, measured under CW drive at fixed PIN = 26 d Bm, Temp = 25 °C. 6.0 GHz 27 37 38 Units d B W % 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please...