| Title | GaN 트랜지스터 For Use With CMPA2560025F |
| Description | The CMPA2560025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si an... |
| Features |
• 24 dB small signal gain • 25 W typical PSAT • Operation up to 28 V • High breakdown voltage • High temperature operation Applications • Ultra broadband amplifiers • Fiber drivers • Test instrumentation • EMC amplifier drivers Package Types: 780019 PN’s: CMPA2560025F Typical Performance Over 2.5 - 6.0 GHz (TC = 25 °C) Parameter 2.5 GHz 4.0 G... |
| Datasheet |
 CMPA2560025F Datasheet - 1.07MB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
1 units: 2280633 KRW
|
| BuyNow |
 BuyNow - Manufacturer a MACOM CMPA2560025F-AMP
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
1 units: 2280633 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 858.07 USD |
BuyNow |
|
 Verical |
2 units: 916.7 USD |
BuyNow |
|
 Richardson RFPD |
1 units: 953.38 USD |
BuyNow |
