GTRB424908FC Overview
Description
The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Key Features
- GaN on SiC HEMT technology
- Typical Pulsed CW performance, 3800 MHz, 48 V, 100 µs pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 450 W
- Efficiency at P3dB = 61%
- Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001)
