Description
The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Features
- high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 250 mA, VGS(Peak) = -5 V,
ƒ = 4000 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
40 35 30 25 20 15 10
5 0
25
80
60
Efficiency
40
20
0
Gain -20
-40
PAR @ 0.01% CCDF 30 35 40 45
-60
gtrb424908fc_g1
-80
50 55
Average Output Power (dBm)
Features.
- GaN on SiC HEMT technology.
GTRB424908FC Datasheet
