GTRB424908FC Description
The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
GTRB424908FC Key Features
- GaN on SiC HEMT technology
- Typical Pulsed CW performance, 3800 MHz, 48 V, 100 µs pulse width, 10% duty cycle, bined outputs
- Output power at P3dB = 450 W
- Efficiency at P3dB = 61%
- Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001)
- Pb-free and RoHS pliant
- 4000 MHz) VDD = 48 V, IDQ = 250 mA, POUT = 56.2 W, VGS(PEAK) = -5 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB
- 4.4 6.3 -6.9 -9.9