| Title | GaN HEMT For Use With GTVA126001EC |
| Description | The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages. Features • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle • Output power P3dB = 600 W • ... |
| Features |
• GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle • Output power P3dB = 600 W • Drain efficiency = 65% • Gain = 18 dB • Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cyc... |
| Datasheet |
 GTVA126001EC Datasheet - 430.25KB |
| Distributor |
DigiKey |
| Stock | 2 In stock |
| Price |
1 units: 1774972 KRW
|
| BuyNow |
 BuyNow - Manufacturer a MACOM LTN/GTVA126001EC-V1
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
1 units: 1774972 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 846.88 USD |
BuyNow |
|
 Richardson RFPD |
No price available |
||
 EBV Elektronik |
No price available |
BuyNow |
