GTVA126001EC Datasheet - MACOM

600W High Power RF GaN HEMT

* GaN on SiC HEMT technology

* Input matched

* Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle

* Output power P3dB = 600 W

* Drain efficiency = 65%

* Gain = 18 dB

* Capable of withstanding a 10:1 loa

GTVA126001EC

MACOM

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600w high power rf gan hemt.

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GTVA126001EC 600W High Power GaN HEMT MACOM

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