GTVA126001EC
Description
The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.
Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle
- Output power P3dB = 600 W
- Drain efficiency = 65%
- Gain = 18 dB
- Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001)
