GTVA126001EC - 600W High Power RF GaN HEMT

MACOM Technology Solutions

Datasheet Details

The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.

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GGaiainn((ddBB)) EffEiffciicieennccyy((%%)) GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.

GaN on SiC HEMT technology.
Input matched.
Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle.
Output power P3dB = 600 W.
Drain efficiency = 65%.
Gain = 18 dB.
Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001).

Brand Logo	Part Number	Description	Manufacturer
	GTVA126001EC	Thermally-Enhanced High Power RF GaN HEMT	Wolfspeed
	GTVA126001FC	Thermally-Enhanced High Power RF GaN HEMT	Wolfspeed

Part Number	Description
GTVA126001FC	600W High Power RF GaN HEMT
GTVA212701FA	Thermally-Enhanced High Power RF GaN on SiC HEMT