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GTVA126001FC - 600W High Power RF GaN HEMT

Product Overview

MACOM

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GTVA126001FC 600W High Power RF GaN HEMT by MACOM - Datasheet Preview — Datasheet preview – GTVA126001FC

Datasheet Details

Part number	GTVA126001FC
Manufacturer	MACOM
File Size	430.25 KB
Description	600W High Power RF GaN HEMT
Datasheet	GTVA126001FC Datasheet
Note	This datasheet PDF includes multiple part numbers: GTVA126001FC, GTVA126001EC. Please refer to the document for exact specifications by model.
Additional preview pages of the GTVA126001FC datasheet.

Product details

Description

The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.

Features

GaN on SiC HEMT technology.
Input matched.
Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle.
Output power P3dB = 600 W.
Drain efficiency = 65%.
Gain = 18 dB.
Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001).

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Published: May 9, 2024 |