GTVA126001FC Datasheet | MACOM Technology Solutions

Description The GTVA126001EC and GTVA126001FC are 600 W Ga N on Si C high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages. Features - Ga N on Si C HEMT technology - Input matched - Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle - Output power P3d B = 600 W - Drain efficiency = 65% - Gain = 18 d B - Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 m A - Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001) - Pb-free and Ro HS pliant Package Types: H-36248-2 Package Types: H-37248-2 PN’s: GTVA126001EC PN’s: GTVA126001FC Power Sweep: Gain & Efficiency 50 V, IDQ = 100 m A, 300 µs pulse width, 10% duty cycle 15 0 1200 MHz 1300 MHz 1400 MHz 400 500 600 30 g126001efc-gr1 700 800 OOuutptuptu Pto Pwoewr (e Wr )(W) Figure 1. Power Sweep: Gain & Efficiency 50 V, IDQ=100 m A, 300 µs Pulse Width, 10% Duty Cycle RF Characteristics Pulsed RF performance (tested in the test fixture) VDD = 50 V, IDQ = 100 m A, POUT = 600 W, ƒ = 1400 MHz, 300 μs pulse width, 10% duty...