GTVA126001FC Datasheet 600w High Power Rf Gan Hemt

Manufacturer: MACOM Technology Solutions

Overview: GGaiainn((ddBB)) EffEiffciicieennccyy((%%)) GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.

They

GaN on SiC HEMT technology.
Input matched.
Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle.
Output power P3dB = 600 W.
Drain efficiency = 65%.
Gain = 18 dB.
Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001).

Brand Logo	Part Number	Description	Manufacturer
	GTVA126001FC	Thermally-Enhanced High Power RF GaN HEMT	Wolfspeed
	GTVA126001EC	Thermally-Enhanced High Power RF GaN HEMT	Wolfspeed

Part Number	Description
GTVA126001EC	600W High Power RF GaN HEMT
GTVA212701FA	Thermally-Enhanced High Power RF GaN on SiC HEMT