MS60N60HGB3 MOSFET
• VDS=600V,ID=60A RDS(on)<0.18Ω @ VGS=10V
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
• performance and reliable operation
.
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter.
Image gallery
Download