.
maspower
MS4N1350 - N-channel MOSFET
MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS.
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MS4N1350E - N-channel MOSFET
MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS.
MASPOWER
MS60N60HGC1 - MOSFET
MS60N60HGB3/C1 Features VDS=600V,ID=60A RDS(on)<0.18Ω @ VGS=10V 100% avalanche tested Minimum Lot-to-Lot variations for robust device perform.
MASPOWER
MS60N60HGB3 - MOSFET
MS60N60HGB3/C1 Features VDS=600V,ID=60A RDS(on)<0.18Ω @ VGS=10V 100% avalanche tested Minimum Lot-to-Lot variations for robust device perform.
maspower
MS4N1350B - N-channel MOSFET
MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS.
maspower
MS4N1350FW - N-channel MOSFET
MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS.
maspower
MSG20T65FQS - MOSFET
Features Low gate charge Trench FS Technology, saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C RoHS product MSG20T65FQS/T/C Appl.
maspower
MS4N1350W - N-channel MOSFET
MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS.
maspower
MSU32F030 - High-performance ARM MCU
MSU32F030 ARM® CortexTM-M0 32 MSU32F030 H2.02 Maspower 20181130 1 MSU32F030 ARM® CortexTM-M0 32 1 .
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MSG20T65FQT - MOSFET
Features Low gate charge Trench FS Technology, saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C RoHS product MSG20T65FQS/T/C Appl.
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MSG20T120FQC - N-Channel IGBT
Features Low Gate charge FS Technology VCE(sat) = 1.7V @ IC = 20A High Input Impedance Short circuit withstand time 10 µs MSG20T120FQC N-Ch.
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MSG20T65FQC - MOSFET
Features Low gate charge Trench FS Technology, saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C RoHS product MSG20T65FQS/T/C Appl.
maspower
MSG15T120FQC - N-Channel IGBT
Features Low gate charge FS Technology Short circuit withstand time 10 uS Saturation voltage:VCE(sat),typ=1.8V @IC=15A and TC=25℃ Applications.
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MSG25T120FQC - MOSFET
Features Low gate charge FS Technology Saturation voltage:VCE(sat),typ= 1.75V @ IC=25A and TC=25℃ RoHS product Applications General purpose .
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5HB06N8 - Power MOSFET
5HB06N8 MOS H-BRIDGE- 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Summary Device V(BR)DSS N-CH 60V P-CH -60V QG 9.0nC RDS(on) 25m.
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MSG40T65FH - IGBT
Features Fast Switching & Low VCE[sat] High Input Impedance VCE(sat) = 1.88V @ IC = 40A High Input Impedance Short circuit withstand time 10.
maspower
MSG40T120FH - High speed Trench Fieldstop IGBT
MSG40T120FH High speed Trench Fieldstop IGBT General Description This IGBT is produced using advanced trench fieldstop IGBT technology, which provide.
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MSN4688 - MOSFET
Features Low On resistance 4.5V/-4.5V drive RoHS compliant Package Dimensions MSN4688 Absolute Maximum Ratings TA = 25ºC Parameter Drain-to-.
MASPOWER
MS8N120FC - MOSFET
Features 100% avalanche tested Avalanche ruggedness Very low intrinsic capacitances High speed switching Very low on-resistance MS8N120FC/T.
MASPOWER
MS8N120FT - MOSFET
Features 100% avalanche tested Avalanche ruggedness Very low intrinsic capacitances High speed switching Very low on-resistance MS8N120FC/T.