MS60N60HGB3
MS60N60HGB3 is MOSFET manufactured by MASPOWER.
Features
- VDS=600V,ID=60A RDS(on)<0.18Ω @ VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device
- performance and reliable operation
Applications
- ZVS phase shifted and other full bridge
- Half bridge
- PFC and other boost converter
- Buck converter
- Single and two switch forward
- Flyback
Absolute Ratings (Tc=25℃)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
±30
Drain Current-continuous
Drain Current-pulse（1）
Single Pulsed Avalanche Energy （2）
1580 m J
Avalanche Current, Repetitive or Non-Repetitive
PD TC=25℃
Maximum Power Dissipation
Derate above
25℃
Operating and Storage Temperature...
