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2SD2012 Datasheet PDF

Micro Commercial Components 2SD2012

NPN Silicon Power Transistors

Part No. 2SD2012
Datasheet 2SD2012 Download
Manufacturer
Micro Commercial Components
Description NPN Silicon Power Transistors
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2SD2012 datasheet page 1 preview

FEATURES

● High DC Current Gain: hFE(1) =100 (Min.)
● Low Saturation Voltage: VCE(sat)=1.0V (Max.)
● High Power Dissipation: PC=25W (TC=25OC)
● Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)
● Epoxy meets UL 94 V-0 flammability rating
●MaMxoimisuuremSRenastitiinvigtysLevel 1
● Mounting Torgue: 5 in-lbs Maximum Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current 3.0 A IB Base Current 0.5 A PC TJ TSTG Collector power dissipation TA=25OC TC=25OC Junction Temperature Storage Temperature 2.0 25 -55 to +150 -55 to +150 W OC OC

ELECTRICAL CHARACTERISTICS

@ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Typ Max Units
2SD2012 page 2 preview 2SD2012 page 3 preview