Toshiba 2SD2012
NPN Transistor
| Part No. | 2SD2012 |
|---|---|
| Datasheet | 2SD2012 Download |
| Manufacturer |  Toshiba |
| Description | NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
2SD2012 Unit: mm● Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A)
● High power dissipation: PC = 25 W (Tc = 25°C)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 60 60 7 3 0.5 2.0 25 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10R1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.7 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Ha...
