MSP0307W mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-30V,ID =-6.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche volt.
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