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MSP0315D Datasheet Preview

MSP0315D Datasheet

P-Channel Enhancement Mode Power MOS FET

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MSP0315D
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
VDS =-30V,ID =-15A
RDS(ON) <54m@ VGS=-10V
RDS(ON) <82m@ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Lead Free
Application
High side switch for full bridge converter
DC/DC converter for LCD display
Power Management in Portable Equipment and BPS
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0315D
MSP0315D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
2500PCS
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-15
-10.5
-45
2.5
0.4
40
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6




MORESEMI

MSP0315D Datasheet Preview

MSP0315D Datasheet

P-Channel Enhancement Mode Power MOS FET

No Preview Available !

MSP0315D
Thermal Characteristic
Thermal Resistance, Junction-to-Case(Note 2)
RθJC
2.5 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Symbol
BVDSS
Condition
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VDS=-24V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-50A
VDS=-5V,ID=-1A
Clss
Coss
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=3
VDS=-15V,ID=-1A,VGS=-10V
VSD VGS=0V,IS=-1.7A
Min Typ Max
-30 -
--
--
-
-1
±100
-1.0 -1. 5
- 43
-5
-2.5
54
-
- 782
- 125
- 86
-
-
-
-9
- 10
- 38
- 23
- 11
- 2.1
- 2.9
-
-
-
-
-
-
-
- - -1.2
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25,VDD=-15V,VG=-10V,L=0.5mH,Rg=25,IAS=-26A
MORE Semiconductor Company Limited
http://www.moresemi.com
2/6


Part Number MSP0315D
Description P-Channel Enhancement Mode Power MOS FET
Maker MORESEMI
Total Page 6 Pages
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