MSP0470D Description
MSP0470D -40V(D-S) P-Channel Enhancement Mode Power MOS FET General.
MSP0470D Key Features
- VDS =-40V,ID =-70A RDS(ON) <10mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switch
- Load switch in high current