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MSP0604L Datasheet Preview

MSP0604L Datasheet

P-Channel Enhancement Mode Power MOS FET

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MSP0604L
-60V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
VDS =-60V,ID =-4A
RDS(ON) <120m@ VGS=-10V
RDS(ON) <170m@ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Lead Free
Application
Load switch
PWM application
PIN Configuration
Marking and pin Assignment
SOT-23-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
MSP0604L
Device Package
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TC=25unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
VDS
VGS
Drain Current-Continuous
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
ID
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient(Note 2)
RθJA
Limit
-60
±20
-4
-12
1.5
-55 To 150
83.3
Unit
V
V
A
A
W
/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6




MORESEMI

MSP0604L Datasheet Preview

MSP0604L Datasheet

P-Channel Enhancement Mode Power MOS FET

No Preview Available !

MSP0604L
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
trr
Qrr
Condition
VGS=0V ID=-250μA
VDS=-60V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VDS=-5V,ID=-4A
VDS=-30V,VGS=0V,
F=1.0MHz
VDD=-30V, RL=7.5
VGS=-10V,RG=3
VDS=-30,ID=-4A,
VGS=-10V
VGS=0V,IS=-4A
TJ = 25°C, IF =- 4A
di/dt = -100A/μs(Note3)
Min Typ Max Unit
-60 -
--
--
-
-1
±100
V
μA
nA
-1.5 -2.2
- 106
- 135
- 10
-3.0
120
170
-
V
m
m
S
- 930
- 85
- 35
-
-
-
PF
PF
PF
-8
-4
- 32
-7
- 25
-3
-7
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- -1.2
--
-4
- 25
- 31
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
2/6


Part Number MSP0604L
Description P-Channel Enhancement Mode Power MOS FET
Maker MORESEMI
Total Page 6 Pages
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