MSP0650D Description
MSP0650D -60V(D-S) P-Channel Enhancement Mode Power MOS FET General.
MSP0650D Key Features
- VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Load switch