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MSP3401L Datasheet Preview

MSP3401L Datasheet

P-Channel Enhancement Mode Power MOS FET

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MSP3401L
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
VDS = -30V,ID = -4.2A
RDS(ON) < 130m@ VGS=-2.5V
RDS(ON) < 75m@ VGS=-4.5V
RDS(ON) < 55m@ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
Power management
PIN Configuration
Lead Free
Marking and pin Assignment
D
G
SOT-23-3L top view
S
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSP3401L
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±12
-4.2
-30
1.2
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
104 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6




MORESEMI

MSP3401L Datasheet Preview

MSP3401L Datasheet

P-Channel Enhancement Mode Power MOS FET

No Preview Available !

MSP3401L
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VGS=0V ID=-250μA
VDS=-24V,VGS=0V
VGS=±10V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
VDS=-5V,ID=-4.2A
-30 - V
- - -1 μA
- - ±100 nA
-0.7 -1
- 47
- 56
72
- 10
-1.3
55
75
130
-
V
m
m
m
S
Clss
- 880
-
PF
VDS=-15V,VGS=0V,
Coss
- 105
-
PF
F=1.0MHz
Crss
- 65
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V,ID=-4.2A
VGS=-10V,RGEN=6
VDS=-15V,ID=-4.2A,VGS=-4.5V
-
-
-
-
-
-
-
7
3
30
12
8.5
1.8
2.7
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-4.2A
- - -1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
2/6


Part Number MSP3401L
Description P-Channel Enhancement Mode Power MOS FET
Maker MORESEMI
Total Page 6 Pages
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