MT1803 mosfet equivalent, n-channel power mosfet.
VDS=30V
℃ID=60A(Tc=25 , VGS=10V) ≦RDS(ON) 6.5mΩ @VGS=10V ≦RDS(ON) 10mΩ @VGS=4.5V
High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired.
Ap.
Switching Applications.
℃Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
VDS VGS ID IDM IS PD
TJ, Ts.
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