Description
This N-Channel MOSFET is produced using PRVWHFK Semiconductor’s adcanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
DC to DC Convertors / Synchronous Rectification
D
G
G DS
TO-3P
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
07NUnits
VDSS VGSS
ID
Drain to Source Voltage Gate to Source Voltage
Drain Current
Features
- RDS(on) = 2.5mΩ ( Typ. )@ VGS = 10V, ID = 75A.
- Fast Switching Speed.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low RDS(on).
- High Power and Current Handling Capability.
- RoHS Compliant
.