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MOSFET

BSS84W-G Datasheet Preview

BSS84W-G Datasheet

P-Channel MOSFET

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MOSFET
BSS84W-G
P-Channel
RoHS Device
Features
- Low on-resistance.
- Low gate threshold voltage.
- Low input capacitance.
- Fast Switching Speed.
Circuit diagram
3
D
1
G
S
2
1.Gate
2.Source
3.Drain
0.053(1.35)
0.045(1.15)
SOT-323
0.087(2.20)
0.079(2.00)
3
12
0.055(1.40)
0.047(1.20)
0.037(0.95)
Typ.
0.004(0.10)
Typ.
0.094(2.40)
0.087(2.20)
0.012(0.30)
Typ.
0.004(0.10)
0.001(0.02)
0.016(0.40)
0.010(0.25)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
(at Ta=25 °C unless otherwise noted)
Parameter
Symbol
Value
Drain-Source voltage
VDSS
-50
Drain-Gate voltage
VDGR
-50
Gate-Source voltage
Drain current (Note 1)
Power dissipation (Note 1)
Thermal resistance from junction to ambient
VGSS
ID
PD
RθJA
±20
-130
200
625
Junction temperature
TJ 150
Storage temperature
TSTG
-55 to +150
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on.
Units
V
V
A
mA
mW
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR58
Comchip Technology CO., LTD.
REV: A
Page 1




MOSFET

BSS84W-G Datasheet Preview

BSS84W-G Datasheet

P-Channel MOSFET

No Preview Available !

MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Drain-source breakdown voltage
V(BR) DSS VGS=0V , ID=-250µA
-50
Gate threshold voltage
VGS(th)
VDS=VGS , ID=-1mA
-0.8
Gate-body leakage current
IGSS
VDS=0V , VGS=±20V
-
VDS=-50V , VGS=0V , TJ=25°C
-
Zero gate voltage drain current
IDSS
VDS=-50V , VGS=0V , TJ=125°C
-
VDS=-25V , VGS=0V , TJ=25°C
-
Forward transconductance
gFS VDS=-25V , ID=100mA
50
Static drain-source on-resistance
RDS(on) VGS=-5V , ID=100mA
-
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS=-25V , VGS=0V,
f=1.0MHZ
-
-
-
Turn-on delay time
Turn-off delay time
td(on)
td(off)
VDD=-30V , ID=-0.27A
VGS=-10V , RGEN=50Ω
-
-
Typ
-75
-1.6
-
-
-
-
-
6
-
-
-
10
18
Max Units
-V
-2.0 V
±100
nA
-15
-60 µA
-100
- mS
10 Ω
45
25 pF
12
-
nS
-
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
QW-BTR58
Comchip Technology CO., LTD.
Page 2


Part Number BSS84W-G
Description P-Channel MOSFET
Maker MOSFET
Total Page 5 Pages
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