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MT4953A Datasheet Preview

MT4953A Datasheet

Dual 30 P-Channel Power MOSFET

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MOS-TECH Semiconductor Co.,LTD
Sep 20
07$
Dual 30 P-Channel PowerMOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

Features
x 5.9 A, –30 V. RDS(ON) =  m: @ VGS = –10 V
RDS(ON) =  m: @ VGS = – 4.5 V
x Extended VGSS range (–25V) for battery applications
x ESD protection diode (note 3)
x High performance trench technology for extremely
low RDS(ON)
x High power and current handling capability
DD1
DD1
DD2
DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS\
VGS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJA Thermal Resistance, Junction-to-Ambient
RTJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
07$07$
13’’
”20 0267(&+ Semiconductor Corporation
5
6 Q1
7
Q2
8
4
3
2
1
Ratings
–30
+25
.9
–50
1.6
1.0
0.9
–55 to +150
78
40
Units
V
V
A
W
qC
qC/W
qC/W
Tape width
12mm
Quantity
2500 units
07$ Rev $1 (()
Datasheet pdf - http://www.DataSheet4U.n




MOS TECH

MT4953A Datasheet Preview

MT4953A Datasheet

Dual 30 P-Channel Power MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = –250 PA
ID = –250 PA,Referenced to 25qC
VDS = –24 V, VGS = 0 V
–30
24
–1
IGSS Gate–Body Leakage
VGS = +25 V, VDS = 0 V
+10
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
'VGS(th)
'TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS, ID = –250 PA
ID = –250 PA,Referenced to 25qC
–5
VGS = –10 V, ID = –5 A
VGS = –4.5 V, ID = –3.3 A
VGS= –10 V, ID = –5 A, TJ=125°C
VDS = –5 V, ID = –.9 A
4 5
70 5
63 85
22
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
1360
240
200
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 :
12 22
13 23
68 108
tf
Qg(TOT)
Qg(TOT)
Qgs
Turn–Off Fall Time
Total Gate Charge, VGS = 10V
Total Gate Charge, VGS = 5V
Gate–Source Charge
VDS = –15 V, ID = –.9 A,
VGS = –10 V
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
38 61
29 40
16 23
4
7
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
tRR Reverse Recovery Time
QRR Reverse Recovery Charge
IF = –.8 A,
diF/dt = 100 A/µs
(Note 2)
–2.1
–0.8 –1.2
24
9
V
mV/qC
PA
PA
V
mV/qC
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
A
V
ns
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 78°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
07$ Rev $1 (()
Datasheet pdf - http://www.DataSheet4U.net/


Part Number MT4953A
Description Dual 30 P-Channel Power MOSFET
Maker MOS TECH
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MT4953A Datasheet PDF





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