Datasheet4U Logo Datasheet4U.com

MT4953 - Dual P-Channel High Density Trench MOSFET

General Description

The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -30V/-4.9A, RDS(ON) = 65mΩ @ VGS = -10V -30V/-3.6A, RDS(ON) = 105mΩ @ VGS = -4.5V Super high dense cell trench design for low RDS(ON) Rugged and reliable SOP-8 package design ‹ ¾ ¾ ¾ ¾.

📥 Download Datasheet

Datasheet Details

Part number MT4953
Manufacturer matrix microtech
File Size 344.15 KB
Description Dual P-Channel High Density Trench MOSFET
Datasheet download datasheet MT4953 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MT4953 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ETC
MT4953 P-Channel MOSFET MT Semiconductor
MT4953A Dual 30 P-Channel Power MOSFET MOS TECH
MT4953A1 P-Channel MOSFET MT Semiconductor
MT4903 P-Channel MOSFET MT Semiconductor

Other Datasheets by matrix microtech

Part Number Description
MT4435 P-Channel Enhancement Mode MOSFET
MT4599C P & N-Channel 60-V(D-S) MOSFET
MT4600 P & N-Channel 100-V(D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr MT4953 Dual P-Channel High Density Trench MOSFET ‹ DESCRIPTION The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. ‹ ¾ ¾ ¾ ¾ ¾ FEATURES -30V/-4.9A, RDS(ON) = 65mΩ @ VGS = -10V -30V/-3.6A, RDS(ON) = 105mΩ @ VGS = -4.