Datasheet Details
| Part number | AO4842 |
|---|---|
| Manufacturer | MSKSEMI |
| File Size | 830.02 KB |
| Description | Dual N-Channel MOSFET |
| Download | AO4842 Download (PDF) |
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| Part number | AO4842 |
|---|---|
| Manufacturer | MSKSEMI |
| File Size | 830.02 KB |
| Description | Dual N-Channel MOSFET |
| Download | AO4842 Download (PDF) |
|
|
|
The AO4842-MSuses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
D1 D1 D2 D2 8 76 5 1 23 4 S1 G1 S2 G2 N-Channel MOSFET Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C ID Current TA=70°C Pulsed Drain Current C IDM Avalanche Current C IAS, IAR Avalanche energy L=0.1mH C EAS, EAR Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6 5 30 10 5 2 1.3 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RJA 48 74 Maximum Junction-to-Lead Steady-State RJL 32 Max 62.5 90 40 Units V V A A mJ W °C Units °C/W °C/W °C/W www.msksemi.com AO4842-MS Semiconductor Compiance Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250A, VGS=0V 30 IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=30V, VGS=0V VDS=0V, VGS=±20V VDS=VGS ID=250A VGS=10V, VDS=5V TJ=55°C 1.2 30 VGS=10V, ID=6A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage VGS=4.5V, ID=5A VDS=5V, ID=6A IS=1A,VGS=0V TJ=125°C IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.6 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Qgs Gat
AO4842-MS Semiconductor Compiance Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4842 | 30V Dual N-Channel MOSFET | Alpha & Omega Semiconductors |
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AO4842 | Dual N-Channel MOSFET | Kexin |
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AO4842 | 30V Dual N-Channel MOSFET | VBsemi |
| Part Number | Description |
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