Datasheet4U Logo Datasheet4U.com

AO4842 - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 7.7A (VGS = 10V).
  • RDS(ON) ＜ 21mΩ (VGS = 10V).
  • RDS(ON) ＜ 30mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D1 D2 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Lead Junction Tem.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4842 30V Dual N-Channel MOSFET Alpha & Omega Semiconductors
AO4842 30V Dual N-Channel MOSFET VBsemi
AO4842 Dual N-Channel MOSFET MSKSEMI
AO4840 60V Dual N-Channel MOSFET VBsemi
AO4840 40V Dual N-Channel MOSFET Alpha & Omega Semiconductors

Other Datasheets by Kexin Semiconductor

Part Number Description
AO4840 Dual N-Channel MOSFET
AO4801 Dual P-Channel MOSFET
AO4803A Dual P-Channel MOSFET
AO4805 Dual P-Channel MOSFET
AO4806 Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Dual N-Channel MOSFET AO4842 (KO4842) ■ Features ● VDS (V) = 30V ● ID = 7.7A (VGS = 10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 30mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D1 D2 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating 30 ±20 7.7 6.5 64 2 1.44 62.5 110 50 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.