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AO4842 Datasheet 30v Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4842 30V Dual N-Channel MOSFET General.

General Description

The AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in buck converters.

Product Summary VDS (V) = 30V ID = 7.7A (VGS = 10V) RDS(ON) < 21mW (VGS = 10V) RDS(ON) < 30mW (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 7.7 6.5 64 2 1.44 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RqJA 50 82 Maximum Junction-to-Lead C Steady-State RqJL 41 D1 G2 S1 Max 62.5 110 50 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 5.1: March 2024 .aosmd.

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