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AO4842 - Dual N-Channel MOSFET

General Description

The AO4842-MSuses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Datasheet Details

Part number AO4842
Manufacturer MSKSEMI
File Size 830.02 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO4842 Datasheet

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AO4842-MS Semiconductor Compiance Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 6A < 30m < 42m D1 D1 D2 D2 S1 G1 S2 G2 SOP-8 General Description The AO4842-MSuses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D1 D1 D2 D2 8 76 5 1 23 4 S1 G1 S2 G2 N-Channel MOSFET Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C ID Current TA=70°C Pulsed Drain Current C IDM Avalanche Current C IAS, IAR Avalanche energy L=0.