AO4842
AO4842 is Dual N-Channel MOSFET manufactured by MSKSEMI.
Description
The AO4842-MSuses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
D1 D1 D2 D2
S1 G1 S2 G2
N-Channel MOSFET
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
IAS, IAR
Avalanche energy L=0.1m H C
EAS, EAR
Power Dissipation B
TA=25°C TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 6 5 30 10 5 2 1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s...
