The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AO4842-MS
Semiconductor Compiance
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V)
30V
6A < 30m < 42m
D1 D1 D2 D2
S1
G1 S2 G2
SOP-8
General Description
The AO4842-MSuses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
D1 D1 D2 D2
8
76
5
1
23
4
S1 G1 S2 G2
N-Channel MOSFET
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
ID
Current
TA=70°C
Pulsed Drain Current C
IDM
Avalanche Current C
IAS, IAR
Avalanche energy L=0.