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AO4842 Datasheet Dual N-channel MOSFET

Manufacturer: MSKSEMI

Overview: AO4842-MS Semiconductor piance Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.

Datasheet Details

Part number AO4842
Manufacturer MSKSEMI
File Size 830.02 KB
Description Dual N-Channel MOSFET
Datasheet AO4842-MSKSEMI.pdf

General Description

The AO4842-MSuses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

D1 D1 D2 D2 8 76 5 1 23 4 S1 G1 S2 G2 N-Channel MOSFET Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C ID Current TA=70°C Pulsed Drain Current C IDM Avalanche Current C IAS, IAR Avalanche energy L=0.1mH C EAS, EAR Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6 5 30 10 5 2 1.3 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RJA 48 74 Maximum Junction-to-Lead Steady-State RJL 32 Max 62.5 90 40 Units V V A A mJ W °C Units °C/W °C/W °C/W .msksemi.

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