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MH251 - Micropower CMOS Output Hall Effect Switch

Key Features

  • CMOS Hall IC Technology.
  • Strong RF noise protection.
  • 1.65 to 3.5V for battery-powered.

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Datasheet Details

Part number MH251
Manufacturer MST
File Size 828.46 KB
Description Micropower CMOS Output Hall Effect Switch
Datasheet download datasheet MH251 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MH251 Specifications Micropower CMOS Output Hall Effect Switch MH251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH251 is special made for low operation voltage, 1.65V, to active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver.