MDD6N60G mosfet equivalent, n-channel mosfet.
à à à VDS = 600V ID = 4.5A RDS(ON) ≤ 1.45Ω @ VGS = 10V @ VGS = 10V
Applications
à à à Power Supply PFC High Current, High Speed Switching
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G
S
Absolute Maximum Rati.
Features
à à à VDS = 600V ID = 4.5A RDS(ON) ≤ 1.45Ω @ VGS = 10V @ VGS = 10V
Applications
à à à Power Supply PFC High .
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general pu.
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