Datasheet Details
| Part number | MDD06N100 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 924.13 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 MDD06N100 Datasheet
|
|
|
General Description
The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDD06N100 is suitable device for Synchronous Rectification For Server and general purpose applications.
Key Features
- VDS = 60V ID = 50A @VGS = 10V RDS(ON) < 10.0 mΩ @VGS = 10V 100% UIL Tested D Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal R.