MDD06N100
MDD06N100 is N-Channel MOSFET manufactured by MagnaChip.
Description
The MDD06N100 uses advanced Magna Chip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD06N100 is suitable device for Synchronous Rectification For Server and general purpose applications.
Features
VDS = 60V ID = 50A @VGS = 10V RDS(ON)
< 10.0 mΩ @VGS = 10V 100% UIL Tested
Absolute Maximum Ratings (Ta = 25o C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1)
Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25o C (Silicon Limited) TC=25o C (Package Limited) TC=100o C
TC=25o C TC=100o C
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Apr. 2015. Version 1.0
Symbol VDSS...
