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MDD06N100 - N-Channel MOSFET

Datasheet Summary

Description

The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD06N100 is suitable device for Synchronous Rectification For Server and general purpose applications.

Features

  •  VDS = 60V  ID = 50A @VGS = 10V  RDS(ON) < 10.0 mΩ @VGS = 10V  100% UIL Tested D Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal R.

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Datasheet Details

Part number MDD06N100
Manufacturer MagnaChip
File Size 924.13 KB
Description N-Channel MOSFET
Datasheet download datasheet MDD06N100 Datasheet
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MDD06N100 – Single N-Channel Trench MOSFET 60V MDD06N100 Single N-channel Trench MOSFET 60V, 50A, 10mΩ ㄹ General Description The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD06N100 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 60V  ID = 50A @VGS = 10V  RDS(ON) < 10.
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