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MDD1501 - Single N-channel Trench MOSFET

Datasheet Summary

Description

The MDD1501 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1501 is suitable device for DC to DC converter and general purpose applications.

Features

  •  VDS = 30V  ID = 67.4A @VGS = 10V  RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested D D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range G S TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg R.

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Datasheet Details

Part number MDD1501
Manufacturer MagnaChip
File Size 1.00 MB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDD1501 Datasheet
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MDD1501 – Single N-Channel Trench MOSFET 30V MDD1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6mΩ General Description The MDD1501 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1501 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 30V  ID = 67.4A @VGS = 10V  RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.
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