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MDD1502 - Single N-channel Trench MOSFET

Datasheet Summary

Description

The MDD1502 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1502 is suitable device for DC to DC converter and general purpose applications.

Features

  •  VDS = 30V  ID = 45.7A @VGS = 10V  RDS(ON) (MAX) < 8.5mΩ @VGS = 10V < 13.0mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested D D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range G S TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg.

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Datasheet Details

Part number MDD1502
Manufacturer MagnaChip
File Size 1.07 MB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDD1502 Datasheet
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MDD1502 – Single N-Channel Trench MOSFET 30V MDD1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mΩ General Description The MDD1502 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1502 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 30V  ID = 45.7A @VGS = 10V  RDS(ON) (MAX) < 8.5mΩ @VGS = 10V < 13.0mΩ @VGS = 4.
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