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MDF5N50B Datasheet Preview

MDF5N50B Datasheet

N-Channel MOSFET

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MDP5N50B / MDF5N50B
N-Channel MOSFET 500V, 5.0 A, 1.4Ω
General Description
The MDP/F5N50B uses advanced Magnachips
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDP/F5N50B is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 500V
ID = 5.0A
RDS(ON) ≤ 1.4
@VGS = 10V
@VGS = 10V
Applications
Power Supply
PFC
Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP5N50B MDF5N50B
500
±30
5.0 5.0*
3.2 3.2*
20 20*
93 27
0.74 0.22
9.3
4.5
230
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec 2011. Version 1.0
Symbol
RθJA
RθJC
MDP5N50B
62.5
1.35
MDF5N50B
62.5
4.6
Unit
oC/W
1 MagnaChip Semiconductor Ltd.




MagnaChip

MDF5N50B Datasheet Preview

MDF5N50B Datasheet

N-Channel MOSFET

No Preview Available !

Ordering Information
Part Number
MDP5N50BTH
MDF5N50BTH
Temp. Range
-55~150oC
-55~150oC
Package
TO-220
TO-220F
Packing
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta = 25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
IS
VSD
trr
Qrr
Test Condition
Min
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 2.5A
VDS = 30V, ID = 2.5A
500
2.0
-
-
-
-
VDS = 400V, ID = 5.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 5.0A,
RG = 25Ω(3)
-
-
-
-
-
-
-
-
-
-
IS = 5.0A, VGS = 0V
IF = 5.0A, dl/dt = 100A/µs(3)
-
-
-
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤5.0A, di/dt≤200A/us, VDDBVDSS, Rg =25Ω, Starting TJ=25°C
4. L=16.5mH, IAS=5.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Typ
-
-
-
-
1.15
5
11.5
2.3
4.1
513
3.6
69
11
16
46
24
5.0
-
232
1.3
Max
-
4.0
1
100
1.4
-
-
-
-
-
-
-
-
-
-
-
-
1.4
-
-
Unit
V
µA
nA
S
nC
pF
ns
A
V
ns
µC
Dec 2011. Version 1.0
2 MagnaChip Semiconductor Ltd.


Part Number MDF5N50B
Description N-Channel MOSFET
Maker MagnaChip
Total Page 8 Pages
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