MDI1N60S mosfet equivalent, n-channel trench mosfet.
VDS = 600V ID = 1.0A RDS(ON) ≤ 8.5Ω
@VGS = 10V @VGS = 10V
Applications
Power supply Battery charger Ballast
IPAK (Short lead)
G
D S
Absolute Maximum Ratings (Ta = 25.
Features
VDS = 600V ID = 1.0A RDS(ON) ≤ 8.5Ω
@VGS = 10V @VGS = 10V
Applications
Power supply Battery charger Ballast.
The MDI1N60S uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general purpose application.
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