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MDI2N60 - N-Channel Trench MOSFET

General Description

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

  • VDS = 600V ID = 1.9A RDS(ON) ≤ 4.5Ω @ VGS = 10V @ VGS = 10V.

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Datasheet Details

Part number MDI2N60
Manufacturer MagnaChip
File Size 744.66 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDI2N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDD2N60/MDI2N60 N-channel MOSFET 600V MDD2N60/MDI2N60 N-Channel MOSFET 600V, 1.9A, 4.5Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 1.9A RDS(ON) ≤ 4.