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MDI1N60S - N-Channel Trench MOSFET

General Description

The MDI1N60S uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.

MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general purpose applications.

Key Features

  • VDS = 600V ID = 1.0A RDS(ON) ≤ 8.5Ω @VGS = 10V @VGS = 10V.

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Datasheet Details

Part number MDI1N60S
Manufacturer MagnaChip
File Size 761.49 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDI1N60S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDI1N60S N-channel MOSFET 600V MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5Ω General Description The MDI1N60S uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general purpose applications. Features VDS = 600V ID = 1.0A RDS(ON) ≤ 8.