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MDI4N60B - N-Channel Trench MOSFET

General Description

The MDD/I4N60B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDD/I4N60B is suitable device for SMPS, HID and general purpose applications.

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Key Features

  • VDS = 600V ID = 3.5A RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V.

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Datasheet Details

Part number MDI4N60B
Manufacturer MagnaChip
File Size 841.88 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDI4N60B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDD4N60B / MDI4N60B N-channel MOSFET 600V MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω General Description The MDD/I4N60B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD/I4N60B is suitable device for SMPS, HID and general purpose applications. . Features VDS = 600V ID = 3.5A RDS(ON) ≤ 2.