MDI2N60 mosfet equivalent, n-channel trench mosfet.
VDS = 600V ID = 1.9A RDS(ON) ≤ 4.5Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
I-PAK G D S (TO-251)
G
Absolute Maxim.
Features
VDS = 600V ID = 1.9A RDS(ON) ≤ 4.5Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, Hig.
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general pu.
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