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MDP1930 - N-Channel MOSFET

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Datasheet Details

Part number MDP1930
Manufacturer MagnaChip
File Size 1.10 MB
Description N-Channel MOSFET
Datasheet download datasheet MDP1930 Datasheet

General Description

The MDP1930 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDP1930 is suitable device for Synchronous Rectification For Server and general purpose applications.

Overview

MDP1930– Single N-Channel Trench MOSFET 80V MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.

Key Features

  •  VDS = 80V  ID = 120A @VGS = 10V  RDS(ON) < 2.5 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TC=100oC (Package Limited) Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Charac.

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