Description
The MDP1930 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 80V
ID = 120A @VGS = 10V
RDS(ON)
< 2.5 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1) Pulsed Drain Current
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TC=100oC (Package Limited)
Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Charac.
MDP1930-MagnaChip.pdf
