Datasheet Details
| Part number | MDP1933 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.07 MB |
| Description | Single N-channel Trench MOSFET |
| Datasheet |
 MDP1933 Datasheet
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General Description
The MDP1933 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDP1933 is suitable device for Synchronous Rectification For Server and general purpose applications.
Key Features
- VDS = 80V ID = 105A @VGS = 10V RDS(ON) < 7.0 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance,.