Datasheet Details
| Part number | MDP1930 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.10 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 MDP1930 Datasheet
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General Description
The MDP1930 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDP1930 is suitable device for Synchronous Rectification For Server and general purpose applications.
Key Features
- VDS = 80V ID = 120A @VGS = 10V RDS(ON) < 2.5 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TC=100oC (Package Limited) Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Charac.