Description
The MDS1652E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 30V ID = 16A @VGS = 10V RDS(ON) (MAX)
< 5.0mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V
5(D) 6(D) 7(D) 8(D)
4(G) 3(S) 2(S) 1(S)
D
G S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range
TA=25oC TA=100oC
TA=25oC TA=100oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Th.
MDS1652E-MagnaChip.pdf
