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MDS1655 - N-Channel Trench MOSFET

General Description

The MDS1655 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDS1655 is suitable device for DC-DC Converters and general purpose applications.

Key Features

  • VDS = 30V ID = 11A @VGS = 10V R DS(ON) < 17.5mΩ@VGS = 10V < 25.0mΩ@VGS = 4.5V.

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Datasheet Details

Part number MDS1655
Manufacturer MagnaChip
File Size 678.57 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDS1655 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDS1655 – Single N-Channel Trench MOSFET 30V MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5mΩ General Description The MDS1655 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1655 is suitable device for DC-DC Converters and general purpose applications. Features VDS = 30V ID = 11A @VGS = 10V R DS(ON) < 17.5mΩ@VGS = 10V < 25.0mΩ@VGS = 4.